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FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
Features
* * * * High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
G
TO-264
G C E
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGL60N100D 1000 25 60 42 120 15 176 70 -55 to +150 -55 to +150 300
Units V V A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.71 2.08 25 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
FGL60N100D
Electrical Characteristics of IGBT
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
ICES IGES Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = 25, VCE = 0V ----1.0 500 mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V 4.0 --5.0 1.6 2.5 7.0 2.0 2.9 V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz ---6300 160 140 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600V, IC = 60A, RG = 51, VGE=15V, Resistive Load, TC = 25C VCE = 600 V, IC = 60A, VGE = 15V -------160 360 410 240 230 45 80 400 700 700 330 300 --ns ns ns ns nC nC nC
Electrical Characteristics of DIODE T
Symbol VFM trr IR Parameter Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current
C
= 25C unless otherwise noted
Test Conditions IF = 15A IF = 60A IF = 60A di/dt = -20A/us VRRM = 1000V
Min. ----
Typ. 1.2 1.8 1.2 0.05
Max. 1.7 2.1 1.5 2
Units V V us uA
(c)2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
FGL60N100D
100 Common Emitter TC=25 80 8V 9V 10V 15V
100 Common Emitter VGE=15V 25 125
80
Collector Current, IC [A]
60
20V
7V
Collector Current, IC [A]
60
40
40
20
VGE=6V
20
0 0 1 2 3 4 5
0 0 1 2 3 4
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
10
Common Emitter VGE=15V
Common Emitter TC= - 40 C
O
Collector-Emitter Voltage, VCE[V]
[V]
Collector-Emitter Voltage, V
CE
3
8
80A 60A
6 30A 60A 80A 2 IC=10A 0
2
4
30A
IC=10A 1 -50 0 50 100 150
4
8
12
16
20
Case Temperature, TC []
Gate-Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level
Fig 4. Saturation Voltage vs. VGE
10 Common Emitter TC=25
10 Common Emitter TC=125
Collector-Emitter Voltage, VCE[V]
8
Collector-Emitter Voltage, VCE[V]
8
6 30A 4 60A 80A 2 IC=10A 0 4 8 12 16 20
6 30A 60A 80A
4
2 IC=10A 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGL60N100D Rev. A
FGL60N100D
10000 Cies
10000 VCC=600V, IC=60A VGE = 15V
Switching Time [ns]
Capacitance [pF]
1000
1000
100
Tr Tf Tdoff Tdon
Coes Common Emitter VGE = 0V, f = 1MHz TC = 25 0.1 1
100
Cres 10 10 0 50 100 150 200
Collector-Emitter Voltage [V]
Gate Resistance, RG [ ]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs. Gate Resistance
20 1000 VCC=600V, Rg=51 VGE= 15V, TC=25 Common Emitter VCC=600V, RL=10 TC=25
Tdoff
Gate-Emitter Voltage,VGE [V]
15
Switching Time [ns]
10
5
Tf Tr Tdon
0 100 10 20 30 40 50 60 0 50 100 150 200 250 300
Collector Current, IC [A]
Gate Charge, Qg [nC]
Fig 9. Switching Characteristics vs. Collector Current
Fig 10. Gate Charge Characteristics
10 IC MAX. (Pulsed) 100 50us
Thermal Response, Z JC [/W]
IC MAX. (Continuous)
Collector Current , I C [A]
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01
100us 10 1ms DC Operation
1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
0.01
single pulse 1E-3 10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, VCE [V]
Rectangular Pulse Duration [sec]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
FGL60N100D
100
1.2 IF=60A TC=25 1.0
120
Reverse Recovery Time, trr [ ]
100
Reverse Recovery Current, I rr [A]
Forward Current, I F[A]
10
TC = 100 TC = 25
0.8 trr 0.6
80
60
1
0.4
40
0.2
Irr
20
0.1 0.0 0.5 1.0 1.5 2.0 2.5
0.0 0 40 80 120 160 200
0 240
Forward Voltage, VFM [V]
di/dt [A/ ]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics vs. di/dt
1.2
Reverse Recovery Time, t rr [ ]
di/dt=-20A/ TC=25
1000
12
Reverse Recovery Current, I rr [A]
100
1.0 trr 0.8
10
Reverse Current, IR [uA]
TC = 150
10
Irr
8
1
0.6
6
0.1 T C= 25
0.01
0.4
4
1E-3 0 300 600 900
10
20
30
40
50
60
Forward Current, IF [A]
Reverse Voltage, VR [V]
Fig 15. Reverse Recovery Characteristics vs. Forward Current
Fig 16. Reverse Current vs. Reverse Voltage
250
TC = 25
200
Capacitance, Cj [pF]
150
100
50
0 0.1 1 10 100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
(c)2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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